| PART |
Description |
Maker |
| 1N476 1N499 1N500 1N279 1N292 1N294 1N567 1N450 1N |
165 V, 500 mA, gold bonded germanium diode
100 V, 500 mA, gold bonded germanium diode
12 V, 500 mA, gold bonded germanium diode
90 V, 500 mA, gold bonded germanium diode
GOLD BONDED DIODES(LOW FORWARD VOLTAGE, LOW POWER CONSUMPTION)
75 V, 500 mA, gold bonded germanium diode
120 V, 500 mA, gold bonded germanium diode
70 V, 500 mA, gold bonded germanium diode
80 V, 500 mA, gold bonded germanium diode
115 V, 500 mA, gold bonded germanium diode
60 V, 500 mA, gold bonded germanium diode
|
BKC International Electronics
ETC[ETC]
|
| 1N128 |
Germanium Diodes / Germanium Rectifiers
|
ETC
|
| 2087-6001-00 |
Point Contact Detector 10 MHz to 18 GHz
|
M/A-COM Technology Solutions, Inc.
|
| DMA4148 |
Silicon Point Contact Mixer Diodes
|
Skyworks Solutions Inc
|
| AA143 |
Gold Bonded Germanium Diodes 0.04 A, GERMANIUM, SIGNAL DIODE, DO-7
Gold Bonded Germanium Diodes
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| FAS-16-17 FAS-6401-2101-1-0BF FAS-6401-2101-2-0AF |
MIL Std. IDC Type Socket, (2.54mm Pitch) IDC - Socket, 2.54mm Pitch (2-Point Contact)
|
Yamaichi Electronics Co., Ltd.
|
| BFU725F BFU725F_N1 BFU725F/N1 BFU725F-N1 BFU725FN1 |
NPN wideband silicon germanium RF transistor
NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package
|
NXP Semiconductors
|
| GL607 OA180 OA1182 OA1161 OA1154 |
10 V, 300 mA, gold bonded germanium diode
20 V, 500 mA, gold bonded germanium diode
100 V, 500 mA, gold bonded germanium diode
140 V, 500 mA, gold bonded germanium diode
55 V, 500 mA, gold bonded germanium diode
|
BKC International Electronics
|
| AU5780AD-T |
AUTOMOTIVE|POINT-TO-POINT TRANSCEIVER|SOP|8PIN|PLASTIC 汽车|点至点收发器|专科| 8引脚|塑料
|
NXP Semiconductors N.V.
|
| 5962-02A0201VXC 5962-02A0201QXC |
Single Point to Point IEEE 1355 High Speed Controller
|
ATMEL Corporation
|
